V. Lykhoshva, A. Tymoshenko, L. Mosentsova, V. Savin, D. Schitz,
Volume 15, Issue 1 (3-2018)
Abstract
This article studies the particle temperature distribution depending on the laser radiation power and the particle’s trajectory and velocity. The uneven heating of particles moving in the laser radiation field is identified. The regimes of laser heating without melting, with partial melting, and with complete particle melting are considered.
Aqeel Mohammed Hamoudi, Karim Choubani, Mohamed Ben Rabha,
Volume 20, Issue 2 (6-2023)
Abstract
In this work, we demonstrate the beneficial effect of introducing a superficial porous silicon layer on the electronic quality of multi-crystalline silicon for photovoltaic cell application. The porous silicon was formed using an acid vapor etching-based method. The porous silicon layer rich in hydrogen and oxygen formed by vapor etching is an excellent passivating agent for the mc-Si surface. Laser beam-induced current (LBIC) analysis of the exponentiation parameter (n) and surface current mapping demonstrates that oxygen and hydrogen-rich porous silicon led to excellent surface passivation with a strong electronic quality improvement of multi-crystalline silicon. It was found that the generated current of treated silicon by acid vapor etching-based method is 20 times greater as compared to the reference substrate, owing to recombination centers passivation of the grains and grain boundaries (GBs); The actual study revealed an apparent decrease in the recombination velocity of the minority carrier as reflected by 25% decrease in the exponentiation parameter (n) of the LBIC versus X-position measurements. These results make achieved porous silicon a good option for advancing efficient photovoltaic cells.
