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Abstract: Glassy samples with xTiO2 .3SiO2 .Na2O composition that (8≤x≤40) (molar) were casted in refractory steel molds after melting at air as parallel palates. After polishing and getting to desire thickness, UV-VIS spectrometry in 200 -1100 nm was measured on samples. Glass density was measured by a sensitive micro balance and was found that by increasing titanium dioxide of glasses, glass density increases. Results from UV-VIS spectroscopy show that increase of titanium dioxide decreases light transmission and this value reaches zero for sample with 40 molar percent of titanium dioxide. One reason of this reduction is formation of crystalline phase in glass, in which, by increasing titanium content crystalline phase will be increased, results of X-ray diffraction and electron microscopy confirm this claim.

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In this paper we have investigated the physical properties of reduced graphene oxide (RGO) thin films prepared at various substrate temperatures of 230, 260, 290, 320 and 350 ^oC using spray pyrolysis technique. We have compared these films from various viewpoints, including structural, morphological, optical, electrical and thermos-electrical properties. XRD analysis showed a phase shift from graphene oxide (GO) to RGO due to elevate the substrate temperature from 200 ^oC to higher temperatures. FESEM images of RGO thin films reveal that a stacked image of irregular and folding nanosheets, and rod-like features at temperatures below and above 290 ^oC; respectively. Optical studies showed that the layers have a relatively high absorption coefficient (∼0.8×10⁴ to 1.7×10⁴ cm⁻¹) in the visible range, with an optical band gap of 1.67–1.88 eV. The Hall effect data showed that all samples have a p-type conductivity with a hole concentration of ∼10¹⁵ cm⁻³, and sheet resistance values of about 10⁶ Ω/sq, in agreement with previous reports. The thermoelectric measurements revealed that with increasing applied temperature gradient between the two ends of the samples, the thermoelectric electromotive force (emf) of the prepared RGO thin films increases.

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The work reported in this paper was focused on the investigation of surface morphological, microstructural, and optical features of polycrystalline BaTiO₃ thin film deposited on p-type Si < 100 > substrate using e-beam PVD (physical vapor deposition) technique. The influence of annealing over the surface morphology of the thin film was analyzed by X-ray diffraction, atomic force microscopy and scanning electron microscopy characterization methods. When the annealing temperature was increased from as-deposited to 800 °C there was a significant growth in the grain size from 28.407 nm to 37.89 nm. This granular growth of BaTiO₃ made the thin film appropriate for nanoelectronic device applications. The roughness of the annealed film got increased from 31.5 nm to 52.8 nm with the annealing temperature. The optical bandgap was computed using Kubelka-Munk (KM) method which got reduced from 3.93 eV to 3.87 eV for the as-deposited to the 800 °C annealed film. The above reported properties made the annealed film suitable for optoelectronic applications. For polycrystalline BaTiO₃ thin film the refractive index varied from 2.2 to 1.98 from 400 to 500 nm and it was 2.05 at 550 nm wavelength. The broad peaks in Raman spectra indicated the polycrystalline nature of the thin film. It had been also observed that with the annealing temperature the intensity of the Raman bands got increased. From these results, it was proved that annealing significantly improved the crystallinity, microstructural, surface morphological and optical features of the barium titanate thin film which made it suitable as sensors in biomedical applications as it is cost-effective, lead-free and environment friendly material.

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Porous nanostructured SnO₂ with a sheet-like morphology was synthesized through a simple green substrate-free gelatin-assisted calcination process using Tin tetracholoride pentahydrate as the SnO₂ precursor and porcine gelatin as the template. Crystalline phase, morphology, microstructure, and optical characteristics of the as-prepared material were also investigated at different calcination temperatures using X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), UV-visible absorption, and Photoluminescence spectroscopy (PL), respectively. XRD patterns of all the samples revealed the presence of a tetragonal crystalline structure with no other crystalline phases. Moreover, the synthesized hierarchical sheets assembled with nanoparticles displayed a large surface area and porous nanostructure. The calculated optical band gap energy varied from 2.62 to 2.87 eV depending on the calcination temperature. Finally, photoluminescence spectra indicated that the nanostructured SnO₂ could exhibit an intensive UV-violet luminescence emission at 396 nm, with shoulders at 374, violet emission peaks at 405 and 414 nm, blue-green emission peak at 486 nm, green emission peak at 534 nm and orange emission peak at 628 nm.

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Copper oxide thin layers were elaborated using the sol-gel dip-coating. The thickness effect on morphological, structural, optical and electrical properties was studied. Copper chloride dihydrate was used as precursor and dissolved into methanol. The scanning electron microscopy analysis results showed that there is continuity in formation of the clusters and the nuclei with the increase of number of the dips. X-ray diffractogram showed that all the films are polycrystalline cupric oxide CuO phase with monoclinic structure with grain size in the range of 30.72 - 26.58 nm. The obtained films are clear blackin appearance, which are confirmed by the optical transmittance spectra. The optical band gap energies of the deposited films vary from 3.80 to 3.70 eV. The electrical conductivity of the films decreases from 1.90.10^-2 to 7.39.10^-3 (Ω.cm)^-1

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This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent which is very rare and therefore, the highest nitrogen to carbon atomic ratio was 0.76. The incorporation of nitrogen promotes the clustering of diamond-like sites at the expense of graphitic ones leading to the decrease of the disorder. The film surface becomes rough with increasing nitrogen concentration. Films are optically transparent in the 200-900 nm wavelength range with a wide gap varying between 3.59 and 3.63 eV. There is an increase in resistivity from 15 to 87.4 x10^-3Ω.cm for a-CN_x thin films for 0.1< R_F < 0.8 and a less decrease for   R_F > 0.8. Pore size increases in the films, but has little influence on band gaps. On the other hand, increasing the pore size reduces electrical interaction between particles by increasing resistivity.

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In this research work, Cadmium Sulphide thin film deposited on to glass substrate in a non-aqueous medium at 80 °C. The various physical preparative parameters and the deposition conditions, such as the deposition time and temperature, concentrations of the chemical species, pH, speed of mechanical stirring, etc., were optimized to yield good quality films. The as-prepared sample is tightly adherent to the substrate's support, less smooth, diffusely reflecting and was analyzed for composition. The synthesized film is characterized using X- ray diffraction (XRD), electrical and optical properties. It appears that the composites are rich in Cd. The grown CdS thin film had an orange-red color. A band gap of CdS thin film is 2.41 eV.  The average crystallite size of the CdS film was 21.50 nm. The resistivity of the CdS thin film is about 5.212 x 10⁵ W cm.
 

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We have modeled theoretical incident photon-to-current electricity (IPCE) action spectra of poly(3-hexylthiophene) (P3HT) and [6,6]-Phenyl C61 butyric acid methyl ester active layer bulk-heterojunction. By the two-dimensional optical model of a multilayer system based on the structure of Glass substrate / SiO₂ /ITO/ PEDOT: PSS /P3HT: PCBM(1:1)/Ca/Al, the optical responses of the device have been computed for different photoactive layer and Ca layer thicknesses to found an optimal structure which allows obtaining the maximum absorption localized in the active layer and high device performance. The electric field intensity, energy dissipation, generation rate, and IPCE have been computed to enhance the device's performance. The finite element method executes the simulation under an incident intensity of 100 mW/cm² of the 1.5 AM illumination. It was found that the optimum structure is achieved by a 180 nm photoactive layer and 5 nm Ca layer thicknesses.