Showing 3 results for Green’s Function
Khodabandehloo, Mirzakuchaki, Karimi,
Volume 2, Issue 1 (1-2006)
Abstract
The mixed-signal circuits with both analog and digital blocks on a single chip have wide applications in communication and RF circuits. Integrating these two blocks can cause serious problems especially in applications requiring fast digital circuits and high performance analog blocks. Fast switching in digital blocks generates a noise which can be introduced to analog circuits by the common substrate. This noise can decrease the performance of mixed-signal circuits therefore, studying this noise and the way it is transmitted will lead to solutions for reducing it and improving mixed-signal circuit’s performance. In this paper, an efficient model for substrate is extracted from Green’s function in MATLAB environment, and its accuracy is demonstrated. Using a VCO and a multiplier as analog and digital blocks, respectively and simulating them along with the proposed model of the substrate, the effects of substrate noise coupled to analog blocks are shown. Finally, some methods for reducing this noise are applied to the circuit, and the results are compared to each other. The results indicate that using P+ Guard Rings is the best method for reducing substrate noise in the mixed-signal circuits.
M. Khalaj Amirhosseini,
Volume 9, Issue 3 (9-2013)
Abstract
In this article, three new green's functions are presented for a narrow strip line (not a thin wire) inside or on a homogeneous dielectric, supposing quasi-TEM dominant mode. These functions have no singularity in contrast to so far presented ones, so that they can be used easily to determine the capacitance matrix of multi-layer and single-layer homogeneous coupled microstrip lines. To obtain the green’s functions, the Laplace’s equation is solved analytically in Fourier integral or Fourier series expressions, taking into account the boundary conditions including the narrow strip. The validity and accuracy of three presented green’s functions are verified by some examples.
M. Akbari Eshkalak,
Volume 12, Issue 2 (6-2016)
Abstract
This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product compared with low-temperature GNRFET (LT-GNRFET) and medium-temperature GNRFET (MTGNRFET). Besides, the LT-GNRFET demonstrates the lowest off-state current and the highest ratios of Ion/Ioff, average velocity and mobile charge. In addition, the LT-GNRFET has the highest gate and quantum capacitances among three aforementioned GNRFETs.
