Showing 4 results for Mosfet
M. Fathipour, M. H. Refan, S. M. Ebrahimi,
Volume 6, Issue 2 (6-2010)
Abstract
High Q frequency reference devices are essential components in many Integrated
circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate
in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device
has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde
channel and Gaussian retrograde channels have been investigated.
A. Rana, N. Chand, V. Kapoor,
Volume 7, Issue 2 (6-2011)
Abstract
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leakage behaviour of HMOS has been investigated with the help of compact analytical model and Sentaurus Simulation. The results so obtained show good agreement between model and simulation data. It is found that HMOS structure has reduced the gate leakage current to great extent as compared to conventional overlapped MOSFET structure. Further, the proposed structure had demonstrated improved on current, off current, subthreshold slope and DIBL characteristic.
A. Daghighi,
Volume 9, Issue 3 (9-2013)
Abstract
In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free circuit is shown. 3-D Simulations of various body-contacted devices are carried out to extract the transition-free body resistances. To identify the output conductance transition-free concept and its application to RF circuits, a 2.4 GHz low noise amplifier (LNA) is analyzed. Mixed mode device-circuit analysis is carried out to simultaneously solve device transport equations and circuit spice models. FFT calculations are performed on the output signal to compute harmonic distortion figures. Comparing the conventional body-contacted and transition-free SOI LNAs, third harmonic distortion (HD3) and total harmonic distortion (THD) are improved by 16% and 24%, respectively.
Two-tone test is used to analyze third order intermodulation distortions. OIP3 is improved in transition-free SOI LNA by 17% comparing with the conventional body-contacted SOI LNA. These results show the possibility of application of transition-free design concept to improve linearity of RF SOI MOSFET circuits.
P. Gupta, S. K. Jana,
Volume 17, Issue 2 (6-2021)
Abstract
The advancement in the integrated circuit design has developed the demand for low voltage portable analog devices in the market. This demand has increased the requirement of the low-power RF transceiver. A low-power phase lock loop (PLL) is always desirable to fulfill the need for a low power RF transceiver. This paper deals with the designing of the low power transconductance- capacitance (Gm-C) based loop filter with the help of the gate-driven quasi bloating Bulk (GD-QFB) MOS technique. The GD-QFB MOS-based operational transconductance amplifier (OTA) has been proposed with a high dc gain of 82.41 dB and less power consumption of 188.72 µW. Further, Gm-C based active filter has been designed with the help of the proposed GD-QFB OTA. The simulation results of Gm-C filter attain a -3 dB cut-off frequency of 59.08 MHz and power consumption of 188.31µW at the supply voltage of 1V. The proposed Gm-C filter is suitable for the designing of 1-3 GHz low power PLL.
