Showing 4 results for Ultra-Wideband
R. Mirzalou, A. Nabavi, Gh. Darvish,
Volume 8, Issue 3 (9-2012)
Abstract
This paper presents a new ultra-wideband LNA which employs the complementary derivative superposition method in noise cancellation structure. A pMOS transistor in weak inversion region is employed for simultaneous second- and third-order distortion cancellation. Source-degeneration technique and two shunt inductors are added to improve the performance at high frequencies. The degeneration inductor resonates at fT/2 and realizes a new input matching technique that widens the bandwidth with decreasing its quality factor and input capacitance, while flattens the input resistance and also improves the 1dB Compression Point. The shunt inductors resonate at the center frequency of the band and improve the effective bandwidth of noise/distortion cancellation technique. This LNA has been designed in a 0.18-μm CMOS process and consumes 8.3 mA from 1.8 V power supply. The chip area is 0.55mm2. The noise figure and voltage gain are 4.48-5.18 dB and 13 dB, respectively. S11 is lower than -13.5 dB over 5.8–10.6 GHz and IIP3 is 14.5–17.5 dBm, IIP2 is 14–15.5 dBm. This technique improves IIP3 more than 9dB.
B. Zakeri, H. Bernety,
Volume 10, Issue 4 (12-2014)
Abstract
Band-notch characteristic has been of great interest recently to overcome the electromagnetic interference of Ultra-wideband systems (UWB) with other existing ones. In this paper, we present a novel microstrip-fed antenna with band rejection property appropriate for UWB applications. Band-notch characteristic has been achieved by adding a rectangular resonant element to the ground section. A prototype was fabricated and measured based upon optimal parameters. Experimental results show consistency with simulation results. Measurement results confirm that the antenna covers the UWB band and satisfies a band rejection in the frequency span of 5 GHz to 5.7 GHz to restrain it from interference with Wireless Local Area Network (WLAN). Then, to achieve better isolation, a rectangular strip is appended to the band-notch creating part of the ground section to enhance obtained VSWR up to 30 through simulation. In addition, by applying a similar technique, a dual band-notched characteristic with an average simulated VSWR of around 13.75 has been achieved for WLAN and the downlink of X band satellite communication systems with each more than 10. Features such as small size, omnidirectional pattern and perfect isolation make the antenna suitable for any UWB applications.
Y. Zehforoosh, M. Sefidi,
Volume 13, Issue 2 (6-2017)
Abstract
In this article, we present a new design of a coplanar waveguide fed (CPW-fed) ultra-wideband (UWB) antenna with dual band-notched characteristics. Two notched frequency bands are achieved by using two inverted U-shaped stepped impedance resonators. The proposed antenna can operate from 2.82 to 11 GHz (118%), defined by VSWR< 2, except two notched bands around 3.5 GHz (WiMAX) and 5.5 GHz (WLAN). The size of the antenna is 20×20×1.6 mm3. The experimental and simulated results of the prototyped antenna, including voltage standing wave ratio (VSWR), radiation pattern, and gain characteristics are presented and discussed. In addition, Analytical Hierarchy Process (AHP) method used for comparison the proposed antenna with previous designed structures.
B. Dorostkar Yaghouti,
Volume 19, Issue 2 (6-2023)
Abstract
By increasing the transceiver devices within the 3.1 to 10.6 GHz frequency band, the interferers and strong blockers from different equipment degraded the main received signals, so linearity performance becomes more notable. In this paper, a two-path low noise amplifier (LNA) is proposed for satisfying the overall efficiency of the Ultra-wideband (UWB) radar used in vital sign detection, precise indoor localization, and high data rate wireless communications. A novel high linear circuit is recommended based on Complementary Derivative Superposition (CDS) and Post Distortion (PD) techniques. High pass filter and inductive source degeneration structured input impedance matching. Post layout results of the designed UWB-LNA in 180-nm CMOS represented the average of third-order Intercept Point (IIP3) is 8.1 dBm, S21 is 11 dB and, S11 is below -10 dB. The minimum noise figure (NF) is 3.11 dB. The circuit draws 12.7 mA at 1.4-V. The chip area is 930 µm × 1090 µm. The proposed design in this work exhibits higher FOM compared to similar LNAs, It is clear, high-linearity performance in total bandwidth is an advantage compared to recent articles.
