Effect of Variation of the Non-Ideality Coefficient on the Electrical Properties of the P-N-Junction in a Strong Microwave Field

Abdulazizov, Bakhrom

doi:10.22068/ijmse.3243

IN PRESS Back to the articles list | Back to browse issues page

‎ 10.22068/ijmse.3243

Effect of Variation of the Non-Ideality Coefficient on the Electrical Properties of the P-N-Junction in a Strong Microwave Field

Bakhrom Abdulazizov

Abstract: (1699 Views)

In this work, the effect of variation of the non-ideality coefficient of the p-n-junction volt-ampere (I-V) characteristic located in the strong microwave field on the differential resistance, diffusion capacitance and differential conductance is studied. Here, it is shown that the p-n junction I-V characteristics increases with the value of the non-ideality coefficient, whether the differential resistance is in a strong microwave field or a weak microwave field. Diffusion capacitance and differential conductance are shown to decrease with increasing value of non-ideality coefficient.

Keywords: p-n junction, strong microwave field, differential resistance, diffusion capacitance, differential conductance