Volume 12, Issue 4 (December 2015)                   IJMSE 2015, 12(4): 19-27 | Back to browse issues page


XML Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Maleki M, Rozati M. Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD. IJMSE 2015; 12 (4) :19-27
URL: http://ijmse.iust.ac.ir/article-1-671-en.html
Abstract:   (23160 Views)

In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

Full-Text [PDF 252 kb]   (4449 Downloads)    
Type of Study: Research Paper |

Add your comments about this article : Your username or Email:
CAPTCHA

Send email to the article author


Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2022 All Rights Reserved | Iranian Journal of Materials Science and Engineering

Designed & Developed by : Yektaweb